Husekova, K: search on Z-Library

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1

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Aarik, Lauri, Arroval, Tõnis, Rammula, Raul, Mändar, Hugo, Sammelselg, Väino, Hudec, Boris, Hušeková, Kristína, Fröhlich, Karol, Aarik, Jaan

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 756 KB

english, 2014

2

Growth of RuO2 thin films by liquid injection atomic layer deposition

K. Hušeková, E. Dobročka, A. Rosová, J. Šoltýs, A. Šatka, F. Fillot, K. Fröhlich

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 852 KB

english, 2010

3

Measurement of generation parameters on Ru/HfO2/Si MOS capacitor

M. Ťapajna, L. Harmatha, K. Hušeková

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 157 KB

english, 2006

4

Metal oxide gate electrodes for advanced CMOS technology

K. Fröhlich, K. Hušeková, Z. Oszi, J.C. Hooker, M. Fanciulli, C. Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom

Journal:

Annalen der Physik

Year:

2004

Language:

english

File:

PDF, 262 KB

english, 2004

5

Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures

Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.

Journal:

Materials Science in Semiconductor Processing

Year:

2019

Language:

english

File:

PDF, 483 KB

english, 2019

6

Growth of gadolinium oxide films for advanced MOS structure

R. Lupták, K. Fröhlich, A. Rosová, K. Hušeková, M. Ťapajna, D. Machajdı́k, M. Jergel, J.P. Espinós, C. Mansilla

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 331 KB

english, 2005

7

Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates

M. Španková, I. Vávra, Š. Chromik, S. Harasek, R. Lupták, J. Šoltýs, K. Hušeková

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 250 KB

english, 2005

8

Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

M. Ťapajna, K. Hušeková, D. Machajdík, A.P. Kobzev, T. Schram, R. Lupták, L. Harmatha, K. Fröhlich

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 235 KB

english, 2006

9

Influence of growth temperature on the structure and electrical properties of high-permittivity TiO 2 films in TiCl 4 -H 2 O and TiCl 4 -O 3 atomic-layer-deposition processes

Arroval, T., Aarik, L., Rammula, R., Mändar, H., Aarik, J., Hudec, B., Hušeková, K., Fröhlich, K.

Journal:

physica status solidi (a)

Year:

2014

Language:

english

File:

PDF, 1.07 MB

english, 2014

10

Investigation of ‘surface donors’ in Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.

Journal:

Applied Surface Science

Year:

2017

Language:

english

File:

PDF, 658 KB

english, 2017

11

Ru and RuO2 gate electrodes for advanced CMOS technology

K. Fröhlich, K. Husekova, D. Machajdik, J.C. Hooker, N. Perez, M. Fanciulli, S. Ferrari, C. Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 304 KB

english, 2004

12

Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric

M. Ťapajna, K. Hušeková, J.P. Espinos, L. Harmatha, K. Fröhlich

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

13

Thermal Stability of Ru Gate Electrode on HfSiO Dielectric

Frohlich, Karol, Espinos, Juan Pedro, Vincze, Andrej, Tapajna, Milan, Husekova, Kristina

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 673 KB

english, 2006

14

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT structures with Al2O3 gate dielectric prepared by various techniques

Gucmann, F., Gregusova, D., Valik, L., Tapajna, M., Hascik, S., Husekova, K., Frohlich, K., Pohorelec, O., Kuzmik, J.

Year:

2016

File:

PDF, 548 KB

2016

15

The intensity of internalization and cytotoxicity of superparamagnetic iron oxide nanoparticles with different surface modifications in human tumor and diploid lung cells

MESAROSOVA, M., CIAMPOR, F., ZAVISOVA, V., KONERACKA, M., URSINYOVA, M., KOZICS, K., TOMASOVICOVA, N., HASHIM, A., VAVRA, I., KRIZANOVA, Z., HUSEKOVA, Z., KUBOVCIKOVA, M., KOPCANSKY, P., TIMKO, M., GA

Journal:

Year:

2012

Language:

english

File:

PDF, 1.73 MB

english, 2012

16

Preparation of SrRuO3 films for advanced CMOS metal gates

K. Fröhlich, K. Hušeková, D. Machajdík, R. Lupták, M. Ťapajna, J.C. Hooker, F. Roozeboom, A.P. Kobzev, C. Wiemer, S. Ferrari, M. Fanciulli, C. Rossel, C. Cabral Jr

Journal:

Materials Science in Semiconductor Processing

Year:

2004

Language:

english

File:

PDF, 274 KB

english, 2004

17

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD

Jurkovic, M, Husekova, K, Cico, K, Dobrocka, E, Nemec, M, Fedor, J, Frohlich, K

Year:

2010

Language:

english

File:

PDF, 89 KB

english, 2010

18

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown A12O3 gate dielectric

Tapajna, M., Husekova, K., Pohorelec, O., Valik, L., Hascik, S., Gucmann, F., Frohlich, K., Gregusova, D., Kuzmlk, J.

Year:

2016

File:

PDF, 219 KB

2016

19

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Electrical characterization of Ru-and RuO2/Ta2O5 gate stacks for nanoscale DRAM technology

Tapajna, M., Dobrocka, E., Paskaleva, A., Husekova, K., Atanassova, E., Frohlich, K.

Year:

2008

Language:

english

File:

PDF, 1.74 MB

english, 2008

20

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Preparation of High Permittivity GdScO

Husekova, Kristina, Jurkovič, Michal, Cico, Karol, Machajdik, Daniel, Dobročka, Edmund, Luptak, Roman, Mackova, Anna, Fröhlich, Karol

Year:

2009

Language:

english

File:

PDF, 520 KB

english, 2009

21

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta 2 O 5 /SiON/Si structures

Ťapajna, M, Paskaleva, A, Atanassova, E, Dobročka, E, Hušeková, K, Fröhlich, K

Journal:

Semiconductor Science and Technology

Year:

2010

Language:

english

File:

PDF, 535 KB

english, 2010

22

Post-deposition processing and oxygen content of TiO2-based capacitors

K. Fröhlich, B. Hudec, J. Aarik, A. Tarre, D. Machajdík, A. Kasikov, K. Hušeková, Š. Gaži

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 318 KB

english, 2011

23

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Low equivalent oxide thickness metal/insulator/metal structures for DRAM application

Hudec, B., Tapajna, M., Husekova, K., Aarik, J., Aidla, A., Frohlich, K.

Year:

2008

Language:

english

File:

PDF, 211 KB

english, 2008

24

Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al 2 O 3 and ZrO 2 gate insulator

Stoklas, R, Gregušová, D, Hušeková, K, Marek, J, Kordoš, P

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 506 KB

english, 2014

25

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Energy Band Diagram of the Ru/Hf0.75Si0.25Oy/Si Gate Stack

Frohlich, K., Espinos, J. P., Tapajna, M., Husekova, K., Luptak, R.

Year:

2006

Language:

english

File:

PDF, 3.27 MB

english, 2006

26

Pathogenic Candida species differ in the ability to grow at limiting potassium concentrations

Husekova, Barbora, Elicharova, Hana, Sychrova, Hana

Journal:

Canadian Journal of Microbiology

Year:

2016

Language:

english

File:

PDF, 2.25 MB

english, 2016

27

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

P. Pisecny, K. Husekova, K. Frohlich, L. Harmatha, J. Soltys, D. Machajdik, J.P. Espinos, M. Jergel, J. Jakabovic

Journal:

Materials Science in Semiconductor Processing

Year:

2004

Language:

english

File:

PDF, 274 KB

english, 2004

28

The Relation Between Human Exposure to Mercury and Thyroid Hormone Status

Monika Ursinyova, Iveta Uhnakova, Rastislav Serbin, Vlasta Masanova, Zuzana Husekova, Ladislava Wsolova

Journal:

Biological Trace Element Research

Year:

2012

Language:

english

File:

PDF, 215 KB

english, 2012

29

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Growth and properties of ruthenium based metal gates for pMOS devices

Frohlich, K., Husekova, K., Machajdik, D., Luptak, R., Tapajna, M., Hooker, J.C.

Year:

2004

Language:

english

File:

PDF, 985 KB

english, 2004

30

Nanoscale Characterization of TiO 2 Films Grown by Atomic Layer Deposition on RuO 2 Electrodes

Murakami, Katsuhisa, Rommel, Mathias, Hudec, Boris, Rosová, Alica, Hušeková, Kristína, Dobročka, Edmund, Rammula, Raul, Kasikov, Aarne, Han, Jeong Hwan, Lee, Woongkyu, Song, Seul Ji, Paskaleva, Albena

Journal:

ACS Applied Materials & Interfaces

Year:

2014

Language:

english

File:

PDF, 1.22 MB

english, 2014

31

Atomic layer deposition of high-permittivity TiO 2 dielectrics with low leakage current on RuO 2 in TiCl 4 -based processes

Aarik, Jaan, Hudec, Boris, Hušeková, Kristina, Rammula, Raul, Kasikov, Aarne, Arroval, Tõnis, Uustare, Teet, Fröhlich, Karol

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 649 KB

english, 2012

32

Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

A. Vincze, R. Lupták, K. Hušeková, E. Dobročka, K. Fröhlich

Journal:

Year:

2009

Language:

english

File:

PDF, 680 KB

english, 2009

33

[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

Tapajna, M., Husekova, K., Frohlich, K., Dobrocka, E., Roozeboom, F.

Year:

2006

Language:

english

File:

PDF, 3.79 MB

english, 2006

34

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

Fröhlich, Karol, Vincze, Andrej, Dobročka, Edmund, Hušeková, Kristina, Čičo, Karol, Uherek, Frantisek, Lupták, Roman, Ťapajna, Milan, Machajdík, Daniel

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 466 KB

english, 2009

35

Creation of Two-Dimensional Electron Gas and Role of Surface Donors in III-N Metal-Oxide-Semiconductor High-Electron Mobility Transistors

Gucmann, Filip, Ťapajna, Milan, Pohorelec, Ondrej, Haščík, Štefan, Hušeková, Kristína, Kuzmík, Ján

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 942 KB

english, 2018

36

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

K. Frohlich, R. Luptak, E. Dobrocka, K. Husekova, K. Cico, A. Rosova, M. Lukosius, A. Abrutis, P. Pisecny, J.P. Espinos

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 478 KB

english, 2006

37

Effects influencing the grain connectivity in ex-situ MgB2 wires

P. Kováč, I. Hušek, M. Kulich, T. Melišek, K. Hušeková, E. Dobročka

Journal:

Physica C: Superconductivity

Year:

2010

Language:

english

File:

PDF, 414 KB

english, 2010

38

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - RuO2/TiO2 based MIM capacitors for DRAM application

Hudec, B., Husekova, K., Aarik, J., Tarre, A., Kasikov, A., Frohlich, K.

Year:

2010

Language:

english

File:

PDF, 97 KB

english, 2010

39

Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition

Fröhlich, K., Lupták, R., Huseková, K., Cico, K., Tapajna, M., Weber, U., Baumann, P. K., Lindner, J., Espinós, J. P.

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 109 KB

english, 2006

40

Silicon based MIS photoanode for water oxidation: A comparison of RuO 2 and Ni Schottky contacts

Mikolasek, Miroslav, Frohlich, Karol, Husekova, Kristina, Racko, Juraj, Rehacek, Vlastimil, Chymo, Filip, Tapajna, Milan, Harmatha, Ladislav

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 785 KB

english, 2018

41

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

A. Paskaleva, M. Ťapajna, E. Dobročka, K. Hušeková, E. Atanassova, K. Fröhlich

Journal:

Applied Surface Science

Year:

2011

Language:

english

File:

PDF, 318 KB

english, 2011

42

Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrode

M. Ťapajna, A. Rosová, K. Hušeková, F. Roozeboom, E. Dobročka, K. Fröhlich

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 628 KB

english, 2007

43

TiO2-Based Metal-Insulator-Metal Structures for Future DRAM Storage Capacitors

Frohlich, K., Hudec, B., Tapajna, M., Husekova, K., Rosova, A., Elias, P., Aarik, J., Rammula, R., Kasikov, A., Arroval, T., Aarik, L., Murakami, K., Rommel, M., Bauer, A. J.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 539 KB

english, 2013

44

Properties of MgB2 superconductor chemically treated by acetic acid

K. Hušeková, I. Hušek, P. Kováč, M. Kulich, E. Dobročka, V. Štrbík

Journal:

Physica C: Superconductivity

Year:

2010

Language:

english

File:

PDF, 615 KB

english, 2010

45

ZrO 2 /InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Gregušová, Dagmar, Hušeková, Kristína, Stoklas, Roman, Blaho, Michal, Jurkovič, Michal, Carlin, Jean-Francois, Grandjean, Nicolas, Kordoš, Peter

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 293 KB

english, 2013

46

Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Boris Hudec, Kristína Hušeková, Aivar Tarre, Jeong Hwan Han, Sora Han, Alica Rosová, Woongkyu Lee, Aarne Kasikov, Seul Ji Song, Jaan Aarik, Cheol Seong Hwang, Karol Fröhlich

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 408 KB

english, 2011

47

Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

Aarik, Jaan, Arroval, Tõnis, Aarik, Lauri, Rammula, Raul, Kasikov, Aarne, Mändar, Hugo, Hudec, Boris, Hušeková, Kristina, Fröhlich, Karol

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 906 KB

english, 2013

48

Impact of plasma treatment on electrical properties of TiO 2 /RuO 2 based DRAM capacitor

Hudec, Boris, Hušeková, Kristína, Rosová, Alica, Šoltýs, Ján, Rammula, Raul, Kasikov, Aarne, Uustare, Teet, Mičušík, Matej, Omastová, Mária, Aarik, Jaan, Fröhlich, Karol

Journal:

Journal of Physics D Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.36 MB

english, 2013

49

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Thermal stability of ruthenium MOS gate electrodes

Tapajna, M., Cico, K., Luptak, R., Husekova, K., Frohlich, K., Harmmatha, L., Hooker, J.C., Roozeboom, F.

Year:

2004

Language:

english

File:

PDF, 1.05 MB

english, 2004

50

High-permittivity metal-insulator-metal capacitors with TiO 2 rutile dielectric and RuO 2 bottom electrode

Hudec, B, Husekova, K, Dobrocka, E, Lalinsky, T, Aarik, J, Aidla, A, Frohlich, K

Journal:

IOP Conference Series Materials Science and Engineering

Year:

2010

Language:

english

File:

PDF, 507 KB

english, 2010

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